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| 886-3-5753170 |E|~ql 86-755-83289224 Http://www.100y.com.tw Specification Comparison Vishay Siliconix SI4814BDY vs. Si4814DY Description: Package: Pin Out: Dual N-Channel, 30-V (D-S) MOSFET with Schottky Diode SO-8 Identical Part Number Replacements: SI4814BDY-T1-E3 Replaces Si4814DY-T1-E3 SI4814BDY-T1-E3 Replaces Si4814DY-T1 Summary of Performance: The SI4814BDY is the replacement to the original Si4814DY; both parts perform identically, including limits to the parametric tables below. ABSOLUTE MAXIMUM RATINGS (TA = 25oC UNLESS OTHERWISE NOTED) SI4814BDY Si4814DY Parameter Symbol Unit Ch-1 Ch-2 Ch-1 Ch-2 Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Continuous Source Current (MOSFET Diode Conduction) Power Dissipation TA = 25C TA = 70C Operating Junction & Storage Temperature Range Maximum Junction-to-Ambient - MOSFET TA = 25C TA = 70C VDS VGS 7.5 ID IDM IS PD Tj & Tstg RthJA 6 40 1.7 1.9 1.2 65 30 +20 7.8 6.3 40 1.8 2.0 1.3 60 7.0 5.6 40 1.7 1.9 1.2 65 30 +20 7.8 6 40 1.8 2.0 1.3 60 W C C/W A V -55 to 150 -55 to 150 MOSFET SPECIFICATIONS (TJ = 25OC UNLESS OTHERWISE NOTED) Parameter Static Ch-1 Gate-Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current VGS(th) IGSS IDSS Ch-2 Ch-1 Ch-2 Ch-1 Ch-2 Ch-1 On-State Drain Current VGS = 10 V ID(on) Ch-2 Ch-1 VGS= 10 V Drain-Source On-Resistance VGS= 4.5 V Forward Transconductance Diode Forward Voltage rDS(on) Ch-2 Ch-1 Ch-2 Ch-1 gfs VSD Ch-2 Ch-1 Ch-2 20 20 0.0145 0.015 0.019 0.018 30 35 0.75 0.47 1.1 0.5 0.018 0.018 0.023 0.022 1.5 1.5 3.0 2.7 +100 +100 1 100 20 20 0.0175 0.0165 0.027 0.022 17 20 0.7 0.47 1.1 0.5 V S 0.021 0.020 0.0325 0.0265 A 0.8 0.8 NS NS +100 +100 1 100 nA A V Symbol Min SI4814BDY Typ Max Min Si4814DY Typ Max Unit 886-3-5753170 |E|~ql 86-755-83289224 Http://www.100y.com.tw Document Number 74072 11-May-05 www.vishay.com 886-3-5753170 |E|~ql 86-755-83289224 Http://www.100y.com.tw Specification Comparison Vishay Siliconix MOSFET SPECIFICATIONS (TJ = 25OC UNLESS OTHERWISE NOTED) Parameter Dynamic Total Charge Gate-Source Charge Gate-Drain Charge Gate Resistance Qg Qgs Qgd Rg Ch-1 Ch-2 Ch-1 Ch-2 Ch-1 Ch-2 Ch-1 Ch-2 Ch-1 td(on) Turn-On Time tr Ch-2 Ch-1 Ch-2 Ch-1 td(off) Turn-Off Time tf Source-Drain Reverse Recovery Time Ch-2 Ch-1 Ch-2 Ch-1 trr Ch-2 6.6 8.9 2.9 3.4 2.3 2.4 1.9 2.3 8 9 11 13 21 27 6 9 28 24 10 14 6.5 9.7 1.5 2.6 2.7 3.8 1.6 1.8 12 13 13 13 22 29 8 12 50 46 10 15 nC Symbol Min SI4814BDY Typ Max Min Si4814DY Typ Max Unit 0.5 0.5 2.9 3.5 15 15 18 20 32 40 10 15 40 35 0.5 0.5 2.6 3.1 20 20 20 20 35 45 15 20 80 80 Switching ns SCHOTTKY SPECIFICATIONS (TJ = 25OC UNLESS OTHERWISE NOTED) Parameter Static Forward Voltage Drop VF TJ = 25oC TJ = 125oC TJ = 25oC Maximum Reverse Leakage Current Junction Capacitance Irm TJ = 100oC TJ = 125oC CT 0.47 0.36 0.004 0.7 3.0 50 0.50 0.42 0.100 10 20 0.47 0.36 0.004 0.7 3.0 50 0.50 0.42 0.100 10 20 pF mA nC Symbol Min SI4814BDY Typ Max Min Si4814DY Typ Max Unit 886-3-5753170 |E|~ql 86-755-83289224 Http://www.100y.com.tw Document Number 74072 11-May-05 www.vishay.com |
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